2009年5月28日 星期四

LDO Regulator 設計要點

Screenshot - 20090516 - 084339

LDO 設計最主要的工作是設計 PMOS, error amplifer, 和適當的 frequency compenstation 電路,步驟如下:

Step 1: 由 steady state 決定 PMOS 的大小。主要是由 Iload 和 PMOS 的 Vdrop (droupout voltage) 決定,條件是讓 PMOS 維持在 saturation.

img017

以 Iload = 50mA and Vdrop = 200mV 為例, 假設為 0.35um 3.3V 製程 uCox = 65uA/V^2.    W/L ~> 40,000. 

For L = 0.4um (3.3V device), W > 16mm,

WL = 6400 um^2  or 80 um x 80 um area.   The gate capacitance is around 80 um x 80 um x 6 fF = 38.4 pF.

 

Step 2: 由 transient condition 決定 close loop (包含 error amplifier and output PMOS) 的頻寬 BW 和 Cload 的大小。

img018

DVdrop(X) 是指在 x 點 (output point) 當 Iload 由0 跳升為 Iload 時的 voltage drop。這是由三部份所組成,ESR, ESL, and C1 的壓降。如果 ESL 很小且 Iload 不大,可忽略 ESL 的壓降。一般我們希望 DVdrop 控制在 Vout 的+/-10% 之內。因此,BW* Cload 必須大於一個常數。

 

 

 

( Cload * BW > constant )

 

先選 output cap 的大小。

Q = CV   i = C dv/dt

dv  = i * ESR +  i / C * dt

i –>  current;  C –> output cap

dt –> close loop bandwidth dt * BW = 0.35  -> dt = 0.35 / BW

dv = i * ESR + 0.35 * i /  (C * BW)

example:  這是由 time domain 決定。 for example, 1.2V 10% is  120mV.   output current is 60mA. ESR = 0.5Ohm, vdrop = 30mV.  dv = 90mv = 0.35*i / (c * BW)   (c*BW) > 0.23

opamp 的 BW = 100KHz  c > 3uF.  

 

Step 3: 決定 frequency compensation 的方式

一般使用 single stage opamp 以簡化 frequency compensation 方式。因此 output pole can be obtain by  Rpar * C par.  Gain can be obtain gm * Rpar.  Therefore, the transfer function is gm * Rpar / (1 + Rpar * Cpar * s).    At high frequency, the UGF = gm / Cpar.  (gm usually around 400uA/V, therefore 10M rad or 1.5MHz. 

On the other hand, the output has another dominant pole, usually Gp = gmp * Rout;  Cout * Rout, therefore, the UGF of output pole is gmp / Cout.  assume gmp = 100mA/V, Cout = 10uF, UGF = 10K rad or 1.5kHz, far smaller compared with originally ucf. 

Screenshot - 20090517 - 195420

如上所述,若沒有 compensation, 兩個 low frequency poles 會造成 no phase margin.  常見解決方法是在 output cap 上加一個 ESR zero,  但仍有其他的 output pole (usually needs to be less than 10% of output cap, Pb), 如下圖所示 。

 

 

Screenshot - 20090517 - 195403

然而 ESR 所造成的 zero, 必須小心控制,太小或太大都不合適。太大乍看之下很好,甚至可以讓 zero 和 Pa 互消,但間題是 ucf 太高, 會被下一個 pole 造成 low phase margin.  相反的,如果 ESR 太小,對 phase margin 沒有什麼貢獻。

Screenshot - 20090517 - 195449

Screenshot - 20090517 - 211947

2009年4月25日 星期六

LDO Regulator 簡介

img003

LDO (Low Dropout Regulator) 的主要功能就是在輸入電壓 (Vin) 或是輸出電流 (Iout) 變動的情形下,仍然維持穩定的輸出電壓 (Vout)。如上圖所示,如果 Vin (就是 line) 有一個電壓的突升, 輸出電壓 Vout 也會隨之改變,但經由 LDO 的回授電路會把 Vout 穩定在原來的電壓,因此 Vout 有一些電壓漣波,同時最終穩定的電壓也有些許的變化。Vout 對 Vin 的變化稱之為 line regulation,後面有更詳細的說明。同樣的如果輸出電流突升,輸出電壓 Vout 也會改變, Vout 對 Iout 的變化則稱為 load regulation。

 img007

上圖是一個 LDO 的原理圖,主要有四個部份。簡單卻包含了類比電路的feedback 控制、和補償的原理。

Reference 和 RC filter: 通常為 bandgap 電路加上 RC 濾波電路提供穩定的參考電壓。

Error Amplifier 及 R1/R2 分壓: 通常為一簡單的 opamp 放大輸出電壓(經R1/R2 比例)和參考電壓的誤差。注意此處參考電壓接正極。實務上 Pass FET 多為 PMOS 提供多一次反向。因此參考電壓會接負極而非正極。

Pass FET: 一般為一個巨大的 PMOS。PMOS 的大小由提供的電流和 dropout voltage 決定。

Cout 及 Rload: Cout 為輸出濾波及提供快速電流給 output load。可以用 Rload 模擬 LDO 提供的電流。 Cout 通常會有寄生電感和電阻,稱之為 ESL 和 ESR (equivlaent serial resistance)。其中 ESR 對於 LDO 的穩定(或振盪)相當重要。

 

LDO performance: AC and Step Response

LDO 常見的特性包含 frequency domain PSRR 和 time domain step response。以 Vin 的 PSRR 為例:

 image

上圖為 Vout 對 Vin 在不同頻率正弦波的 rejection ratio 。一般可分為三區:

  • Region 1 是由 reference 和 RC filter 決定。由於 RC 面積的限制,一般 RC filter 的頻率很難低於100 Hz。
  • Region 2 是由全部的 feedback loop 的 gain 和 frequency response 決定,包含 error amp, pass FET, output load 和 R1/R2。一般 dominant pole 是由 Cout Rload 決定 (10uF, 10 Ohm ~  1.5kHz)。
  • Region 3 是由 output 電容分壓決定。Cout 愈大,PSRR 在 region 3 愈高。

 

再以 load current 的 500mA step response 為例:

 Screenshot - 20090511 - 002144

可分為二區

第一區為高頻區 (以 close loop 的 loop bandwidth 為準)。因為 error amplifier 和 PMOS 來不及反應,電流由外接電容供應,因此 Vout 往下降。可以根據 output cap 以及寄生的電阻電感、再細分為三個部份壓降,分別為 ESR, 其次為 ESL, 然後是 cap 造成。ESL 壓降最快,反應電流的變率(微分);ESR 壓降其次,直接反應電流; cap 壓降最慢,反應電流的積分 (droop)。

一旦進入了 loop bandwidth 的反應時間,error amplifier 和 PMOS 開始動作,加大的電流同時供應 output load 以及對電容充電。電壓上升,這時對應的是 PSRR 的 region II 。

理論上可以同樣得出 Vin  的 step response 和 load current 的 ac response。可由 fourier transform 得到。不過一般 LDO 較少用到。

  AC response Step response
Input Voltage PSRR, 週期性 noise step noise
Load current 很少用到 常見且重要

 

LDO Frequency Compensation

Screenshot - 20090516 - 012513

上述的 LDO 很明顯有 stability 的問題,因為有兩個低頻的 poles:一個位於 output 的 dominant pole,由 Cload (~10uF) 所造成;另一個位於 PMOS  gate 的 non-dominant pole,由 PMOS 的 gate capacitance (Cgate ~ 幾十 pF) 所造成。另外加上一些高頻的 poles, 會讓 phase margin 小於10度而引起 stability 的問題。

更麻煩的是 Cload 所看到的等效電阻會隨著 Iload 有很大的改變。大電流時 (50-100mA) 等效電阻小 (Rload 和Rpar, 幾十歐姆),小電流時 (<1mA) 時等效電阻大 (> kOhm)。會造成 dominant pole 頻率可能相差百倍。

相反的,Cgate 所看到的等效電阻 (error amplifier output impedance) 卻是與 Iload 無關,non-dominant pole 的頻率基本上不會隨著 Iload 改變 (但仍與 PVT 有關)。因些有可能藉著增加 zero 來補償 (或者可想成 cancel) non-dominant pole 而增加 phase margin。

 

Screenshot - 20090516 - 084339

最容易加上 zero 的方法就是直接利用 output cap 上的 ESR,自動創造出一個位於 Cload* ESR 的 zero。這個增加 zero 的方法簡單有效,廣為 LDO 所用,但是有一些限制。

  1. 為了能適當的補償或 cancel non-dominant pole,ESR 值有一定的範圍,太大或太小都會造成問題。
  2. 必須選擇 tantalum (鉭質)電容,因為 ESR 值適中 (~100 mOhm) 且不隨著溫度變化太大。ceramic 電容雖然體積小且低價,但 ESR 過小 (<10 mOhm) 不適合。一般電解電容的 ESR 隨溫度變化太大也不適合。
  3. 另外 ESR 在 Iload 變化時,會有額外的壓降而造成 Vout 上的 noise。

對於 LDO 更詳細的介紹請參考 LDO 設計重點一文。

2009年2月22日 星期日

藍牙簡介

如前文所述,bluetooth 己成為 mobile computing 的 de facto 外接的標準。本文主要討論 bluetooth 的規格及應用。

Bluetooth 有內定的 profile 決定有關的應用,可參考 wiki。以下舉出手機中常見的 profile:

  • Hands Free and Headset profile: HFP / HSP
  • Advanced Audio Distribution (Stereo) profile: A2DP
  • Audio/Video Remote control profile: AVRCP

不同的 profile 並不完全是獨立的,常常是互相關連,如下圖所示。GAP 是最基本的 profile;GAVDP 是架構在GAP之上; A2DP 又是架構在 GAVDP之上。

image

以下說明各種 os/device 對 profile 的支援程度。以 embedded OS 而言,symbian 目前有最完整的 bluetooth profile 支援。

 

General OS

Windows XP SP2/Vista/7

The Microsoft Windows Bluetooth stack only supports external or integrated Bluetooth dongles attached through USB. It does not support Bluetooth radio connections over PCI, I²C, serial, PC Card or other interfaces.

Windows XP includes a built-in Bluetooth stack starting with the Service Pack 2 update, released on 2004-08-06.

The Windows XP and Windows Vista Bluetooth stack supports the following Bluetooth profiles natively: SPP, DUN, HID, HCRP.  Windows 7 also supports audio related profiles-HFP, HSP, A2DP and AVRCP natively.

 

Linux

The Linux operating system currently has two widespread Bluetooth stack implementations:

BlueZ is the official Bluetooth stack for Linux and is used in Google's Android OS. Its goal is to make an implementation of the Bluetooth wireless standards specifications for Linux. As of 2006, the BlueZ stack supports all core Bluetooth protocols and layers.  It was initially developed by Qualcomm, and is available for Linux kernel versions 2.4.6 and up.

 

MAC OS

Mac OS X: As of version 10.5, Mac OS X includes native support for A2DP on Bluetooth equipped Macs.  Version 10.4 does not support A2DP, but can be hacked to enable limited functionality.  Softick Audio Gateway for Mac OS X also supports A2DP. Despite being capable of A2DP, the iPhone variant of OS X provides no A2DP support as of October 2008. (But will be supported in future versions of the iPhone OS.)

 

Embedded OS

BlueMagic

BlueMagic 3.0 is Open Interface's (now Qualcomm) highly portable embedded Bluetooth protocol stack which power's Apple's iPhone and Qualcomm-powered devices such as the Motorola RAZR. BlueMagic also ships in products by Logitech, Samsung, LG, Sharp, Sagem, and more. BlueMagic 3.0 was the first fully certified (all protocols and profiles) Bluetooth protocol stack at the 1.1 level.

 

BlueCore Host Software (BCHS)

CSR's BCHS or BlueCore™ Host Software provides the upper layers of the Bluetooth® protocol stack (above HCI, or optionally RFCOMM) - plus a large library of Profiles - providing a complete system software solution for embedded BlueCore applications. BCHS supports 1.2, 2.0+EDR and 2.1+EDR. Current qualified Profiles available with BCHS: A2DP,AVRCP,PBAP,BIP,BPP,CTP,DUN,FAX,FM API,FTP GAP,GAVDP,GOEP,HCRP,Headset,HF1.5,HID,ICP,JSR82,LAP Message Access Profile,OPP,PAN,SAP,SDAP,SPP,SYNC,SYNC ML.

 

Windows CE/Mobile

Windows CE is Microsoft's embedded operating system, which also supports Bluetooth. However, different stacks can be installed on windows CE devices, including Microsoft, Widcomm, and Toshiba, depending on the embedded device on which the OS is installed.

Windows Mobile (previously Pocket PC, PPC): Version 5.0 and newer (with AKU 2.0), thus far based on the Windows CE 5.0 kernel, fully support A2DP if an appropriate device is present.

There is a huge amount of debate on the forums as to what Bluetooth profiles Windows Mobile devices support.  Below is the list that we support natively in the Microsoft Stack in AKU 2.0 of Windows Mobile 5.0 and beyond:

Generic Access Profile (GAP)
Generic Object Exchange Profile (GEOP)
Serial Port Profile (SPP)
Dial-up Networking (DUN) Profile
Hands-Free Profile (HFP)
Headset Profile (HSP)
Human Interface Device (HID) Profile
Object Push Profile (OPP)
ActiveSync-Over-Bluetooth
Advanced Audio Distribution Profile (A2DP)
Audio/Video Remote Control Profile (AVRCP)

The confusion typically starts because it is up to to the OEM to choose which ones they implement or to add additional support for other profiles.

 

Symbian OS bluetooth profile (v9.2)

Symbian OS is an operating system for mobile phones, which includes a bluetooth stack. All phones based on Nokia's S60 platform and Sony Ericsson/Motorola's UIQ platform use this stack. The Symbian bluetooth stack runs in user mode rather than kernel mode, and has public APIs for L2CAP, RFCOMM, SDP, AVRCP, etc. Profiles supported in the OS include GAP, OBEX, SPP, AVRCP, GAVDP, PAN, PBAP.  Additional profiles supported in the OS + S60 platform combination include A2DP, HSP, HFP1.5, FTP, OPP, BIP, DUN, SIM access, device ID.

There are two kinds of profiles provided for by Symbian OS: implemented and supported. Implemented profiles can be used directly from the existing components. When a profile is supported the licensee will need to provide its own APIs to make the functionality of that profile available to application developers.

image

The above figure shows the dependencies of profiles. The shaded profiles are implemented by the Symbian OS Bluetooth subsystem.

Implemented Bluetooth profiles

The following profiles are implemented by Symbian OS Bluetooth:

  • Generic Access Profile (GAP)

  • Serial Port Profile (SPP)

  • Generic Object Exchange Profile (GOEP)

  • Personal Area Networking (PAN) Profile

  • Audio Video Remote Control Profile (AVRCP)

  • Generic Audio Video Distribution Profile (GAVDP)

 

Android (Cupcake)

Android bluetooth is based on BlueZ on Linux.  New kernel based on Linux 2.6.27.  However, the bluetooth API is not supported till v1.0 release.  Google promised it will support A2DP profile.  The tentative release cupcake supports A2DP and AVRCP profiles.

iphone OS

iphone OS is based on MAC OS X.  The only bluetooth device opens now is the bluetooth headset.  It is annoying!

50/75 Ohm for RF?

所有 RF 工程師都熟悉如下圖 50 Ohm 的阻抗匹配。舉凡 LNA, PA, 天線, 高頻頭 (tuner), waveguide 等等,都要求 50ohm 的阻抗。唯一的例外是有線電視,通常使用 75ohm 的纜線。到底當初為什麼會選擇 50 或 75ohm的阻抗?以及在 rf ic 的設計上是否應沿用 50ohm 的阻抗?本文參考 Tom Lee 的說明給予一些解釋。

image

為什麼要做阻抗匹配?

常見的幾種說法:

1. Max power delivery:當阻抗匹配時,能傳遞最大的能量(功率)

2. 相反的,如果沒有適當的阻抗匹配,發射端的能量會反射,有可能損壞機器,如上圖的 phase array radar 系統所示。或者接收端可能收不到訊號。

為什麼用 50 Ohm 做阻抗?

主要有兩個考量:

1. Power delivery (能量傳遞):  主要考慮發射端能把最大的能量傳遞至天線或雷達。由於能量和阻抗成反比,阻抗愈小,電流愈大,能量愈大。

2. Power Attenuation (能量衰減): 所有的 wavegude 和 cable 都有雜散電阻。特別高頻有所謂的 skin effect, 會使電阻隨頻率(平方根)增加,因而讓發射或接收信號衰減。因此會希望阻抗愈大,電流愈小,損失的能量愈小。

同樣的考量也存在電力網上。電力網的解決之道是用變動的阻抗(變動的電壓和電流)來解決。在頭端和末端使用低電阻和高電流(110V/220V 電壓)以達到高能量傳遞。但在傳送過程中使用高電壓和低電流以避免能量衰減,同時維持高的能量傳遞。在 RF 中一般傳送的距離很短,也有相當的困難使用變動的阻抗。因此仍然以固定阻抗為主。

Tom Lee 的書花了一番功夫推導兩者的最佳值。就 power delivery 而言,最好的值是是 32 Ohm.  就 power attenuation 而言,最佳值約為 77 Ohm.  因此取平均值為 50 Ohm.  詳細的推導可參閱 Tom Lee 的書。然而在 cable TV 的應用,因為主要為通訊目的而選為 75 Ohm 以增加傳送距離。

RF IC 也應用 50 Ohm 做阻抗嗎?

當然是否定。因為 50 Ohm 或 75 Ohm 只是人為的選擇。以 RF IC 而言,既不能 power delivery 也非 power attenuation, 反而是重在 RF signal 的放大,frequency translation, filtering, etc. 除了和 IO interface 有關的電路仍應用 50 Ohm 以和外部元件匹配 (trace, 天線, etc.),內部線路可用類似電力線做法用 variable impedance 以達成最佳的效果。甚至可以忽視阻抗匹配,因為非常短距離。例如 Ro 用低阻抗而下級 Ri 用高阻抗,如同設計低頻電路一樣。

數值方面的解釋可以參考 Crawford 的文章

2009年2月13日 星期五

Beauty of Dipole Antenna

Before diving into the dipole antenna, let's feel the simple beauty of radiation wave of a dipole antenna.  A good picture is worth a thousand words.

Example 1: A small dipole antenna.  Please refer to the following figure for the radiation wave.  It vividly shows how static electrical field becomes electromagnetic wave when the dipole is oscillating. 

image 

Fig. 1: Electrostatic field and electromagnetic wave

Example 2: for a λ/2 dipole antenna, the radiation wave is shown in the following figure.  The maximal radiation wave is at equator.  No radiation wave at the north and south poles.

image 

Fig. 2: λ/2 dipole antenna radiation wave

Example 3: for a λ wavelength dipole antenna, the radiation wave is shown in the link.  The maximal radiation wave is at equator.  Again, no radiation wave at the north and south poles.

 Example 4: for a 3λ/2 dipole antenna, the radiation wave is shown in the following figure.  The maximal radiation wave is 45 degree between the equator and two poles.  Again, no radiation wave at two poles.

image 

 Fig. 3: 3λ/2 dipole antenna radiation wave

The above radiation wave animation is essentially derived from Maxwell equations.  The process is very cubersome and only solved by numerical method in computer.

Dipole Antenna Lumped Circuit Model

The core equivalent circuit of a dipole antenna is a serial RLC resonator.  Intuitively, the dipole antenna acts as an open circuit as a serial RLC resonator at low frequency as shown in Fig. 4(a).

On the contrary, the equivalent circuit model of a loop antenna is a parallel RLC resonator.  The loop antenna behalves as a short circuit as the parallel RLC resonator at low frequency as shown in Fig. 4(b).

The resonant resistance Rrad is not a physical resistance, but an equivalent resistance representing the radiative to the air.  Radiation resistance is only part of the antenna impedance.  Inductive and capacitive reactance are also present.  Energy that is transferred to the near field relates to the reactive component of the current in the antenna.  This is the 1/R^2 component of the electric and magnetic fields that we neglected when deriving the expressions for the far fields. 

A serial RLC resonator is only a first order approximation.  We need to consider other effects for a real antenna at RF frequency.

ant

Fig. 4: Dipole and loop antenna equivalent circuit model

1. Rs, ohmic resistance and skin effect: a real antenna has finite ohmic resistance.   Rs also increases proportionally to sqrt(f) and becomes significant at high frequency.

2. Cp, parasitic capacitance of antenna. It can be modeled as a shunt capacitance.

Fig. 4(c) shows the equivalent circuit model including Rs and Cp, a better model than a serial RLC model.  We called it a lumped circuit model because we borrow circuit concepts (such as R, L, C, voltage, and current) to model the field behavior (such as electrical field, magnetic field, wave).  Strictly speaking, the lumped circuit model is only valid at low frequency where the wavelength is much longer than the antenna.  Nevertheless, we can break the entire operating freuqency range into different segment and use different lumped circuit model.

Lumped Circuit Model vs. Wavelength

When the dipole is very short (relative to wavelength), the dipole can be modeled as a series RLC circuit in which the impedance is dominated by radiation resistance and capacitive reactance. As the antenna is made longer, Rrad and XL increase and XC decreases. When the physical length equals λ/2 , XL = XC with a resulting impedance of Rrad (~73W).  As the antenna is made longer than λ/2, the model is a parallel RLC circuit. When length equals λ, the tank LC circuit has infinite impedance, leaving the parallel Rrad (~200W) as the net impedance.  Between a length of λ and 3λ/2 (Rrad~105W), the model is a series RLC circuit, and so forth.  This result is sumarized in Fig. 4(d).

See the figure for the variation in Rrad, which itself varies with wavelength.  Note that Rrad is about 73W at λ/2.   So we want to use a 75 ohm cable to match the impedance of a half-wave dipole in order to have maximum power transfer from the generator to the antenna. Notice that we used the impedance of space, ήo, in the calculation of Rrad. If we do not use a length of λ/2, there will be impedance mismatch and reflections, leading to a standing wave ratio greater than unity, i.e. less than maximum power transfer to the antenna.

image

Fig. 5: Dipole antenna radiation resisance vs. λ

Bandwidth
Note that the system is designed for specific frequency; i.e. at any other frequency it will not be one-half wavelength. The bandwidth of an antenna is the range of frequencies over which the antenna gives reasonable performance. One definition of reasonable performance is that the standing wave ratio is 2:1 or less at the bounds of the range of frequencies over which the antenna is to be used.

Dipole Antenna Smith Chart

It seems that there is a delimma to get a full picture of a simple dipole antenna.  Solving Maxwell equations provides the accurate solution, but loses the physical intuition and not practical due to the computation complexity. 

Lumped circuit model provides a simple approximation of a dipole antenna, it is useful but only valid within limited frequency range.  The situation is shown in Fig. 6.

img011

Fig. 6: Different abstration in electrical discipline

Luckily, there is a another tool originally derived from transmission line, namely Smith Chart, provides useful physical insight and enough accuracy for understanding the dipole antenna.  A brief introduction of Smith Chart is on the other article.  Lumped circuit is a subset included in Smith Chart.  Smith Chart (transmission line) is based on a specific EM wave called TEM (tranverse EM) wave where the dynamic electrical and magnetic fields are perpendicular to the wave propagation direction.  The majority of EM wave and waveguide either belong to the TEM domain or can be approximated by TEM wave.  That is, Smith Chart is a very useful tool to solve most electrical problems.

Fig. 7 shows the Smith chart of the input impedance (S11) of a monopole (half of a dipole antenna) without Rs and Cp.  The red trace starts from open circuit and capacitive at low frequency, and intersects at real axis at the first resonant frequency (λ/2, 36W).  The input impedance becomes inductive after the first resonance till it reaches the second resonant frequency (λ, 105W) so on and so forth.  Fig. 8 shows the Smith chart of a similar monopole antenna but with Rs and Cp.  Clearly, the input impedance is capacitive due to Cp at the first resonant frequency. 

smith_ant

Fig. 7: S11 of a monopole antenna without Rs and Cp

 smith_ant_cap

Fig. 8: S11 of a monopole antenna with Rs and Cp

2009年2月4日 星期三

如何在 Transport Stream 做 Data Service

 

Example 1: EPG

Propritary data service defined in DVB (T/C/S?)

 

Example 2: TPEG

Orginal based on RDS-TMC then use in DAB or DVB (particularly DVB-H, but not DVB-T?)

 

Example 3: IP over MPE

DVB-T/H/S uses MPE (multi-protocol encapsulation)

ESG?

How about DAB-IP ?

 

Moreover HTML or XML over TS?

 

Can use hardware to strip IP packets

DVB-H adds another MPE-FEC

Applications:

Data broadcasting for

for emergence

general information

How about advertisement?

html? (file type, no return channel)

2009年1月16日 星期五

Smith Chart

Introduction

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Maxwell published his famous equations governing all electrical and electronic phenomenon (with some quantum mechanics in some cases) in 1873.  There are two problems.  First, the math of solving the Maxwell equation consists of vector analysis and partial differential equation.  It is too cubersome to derive the solution of a particular problem.

It seems that there is a dilemma to get a full picture of a simple dipole antenna.  Solving Maxwell equations provides the accurate solution, but loses the physical intuition and not practical due to the computation complexity. 

Lumped circuit model provides a simple approximation of a dipole antenna, it is useful but only valid within limited frequency range.  The situation is shown in Fig. 6.

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Fig. 6: Different abstraction in electrical discipline

Luckily, there is a another tool originally derived from transmission line, namely Smith Chart, provides useful physical insight and enough accuracy for understanding the dipole antenna.  A brief introduction of Smith Chart is on the other article.  Lumped circuit is a subset included in Smith Chart.  Smith Chart (transmission line) is based on a specific EM wave called TEM (transverse EM) wave where the dynamic electrical and magnetic fields are perpendicular to the wave propagation direction.  The majority of EM wave and waveguide either belong to the TEM domain or can be approximated by TEM wave.  That is, Smith Chart is a very useful tool to solve most electrical problems.

 

The Smith Chart is plotted on the complex reflection coefficient plane in two dimensions and is scaled in normalized impedance (the most common), normalized admittance or both.  Normalized scaling allows the Smith Chart to be used for problems involving any characteristic impedance or system impedance, although by far the most commonly used is 50 Ohm.  With relatively simple graphical construction it is straightforward to convert between normalized impedance and the corresponding complex voltage reflection coefficient.  Please refer wiki's Smart Chart for details and this reference.

How Smith Chart Work?

The keys are complex reflection coefficient, G, and normalized impedance, z, are plotted on the same chart as shown in Figure 1. 

  • The red x-y aisles represents the real and imaginary part of G.  The intersecting point is the origin of the Smith Chart.  Because |G| <= 1, the Smith Chart is fit inside a unit circle.  The Smith Chart is not suitable for active circuit where the reflection coefficient might be larger than 1.     
  • The green circles represent zr = constant (zr is the real part of normalized impedance).  The constant must be positive.  The largest circle corresponds to zr=0 and also |G|=1.  As zr increases to infinity, the circle converges to a point G=1 that is a open load.   
  • The black circles represents zi = constant (zi the imaginary part of normalized impedance).  The constant can be positive/inductive, circles on the upper plane; or negative/capacitive,  circles on the lower plane.  The largest circle, x-axis,  corresponds to zi=0.  As zi increases to both positive/negative infinity, the circles also converges to a point G=1 that is a open load.     

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Fig. 1: Smith Chart Fundamental

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Fig. 2: Smith Chart

  • The red-dot in Fig. 2 corresponds to no reflection (50Ohm load, G=0) ; the blue-dot corresponds to short load (G=-1); the green-dot corresponds to open load (G=1).  The open load and short load is mirrored to each other through l/4 transformation as discussed in the next section.
Example:

Assume the characteristic impedance is 50Ω :

Z1 = 100 + j50Ω    Z2 = 75 - j100Ω    Z3 = j200Ω
Z4 = 150Ω  Z5 = ∞ (open)   Z6 = 0 (short)
Z7 = 50Ω   Z8 = 184 - j900Ω

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Fig. 3: Some Example Impedance

Note that a dipole antenna is close to open (Z5) at DC and becomes capacitive at lower frequency (Z8).  If it is well matched at operating frequency, the impedance is close to 50Ohm (Z7); that is: Z5->Z8->Z2->Z7.  Practically, the trajectory may be similar to the purple area because of non-perfect matching.

 

Transmission Line on Smith Chart

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Fig. 4: Input Impedance with Transmission Line

One key advantage of Smith Chart is to obtain the input impedance of a load with transmission line shown in the above figure. 

  • For a lossless transmission line, the input impedance toward source is simply a clockwise rotation of the load impedance on the Smith Chart shown in Fig. 2.  To remember clockwise rotation is to observe open load (green-dot) turns to capacitive (negative) load first; or short load (blue-dot) turns to inductive (positive) load first.
  • One full circle rotation on Smith Chart represents half-wavelength (l/2) transmission line length; half circle rotation represents l/4 line length.  Remember the famous quarter wavelength impedance transformation.  From open to short is half circle rotation, corresponds to l/4 transmission line length.  For any load after the l/4 transformation, the input impedance becomes the mirror point (with origin) on the Smith Chart.

Even though the Smith Chart is developed for system with transmission line, it is also very useful in lumped circuit for matching and analysis purpose in RF IC design  shown in next sections.

 

Admittance Smith Chart

The Smith chart is built by considering impedance (resistor and reactance).  Once the Smith chart is built, it can be used to analyze these parameters in both the series and parallel worlds.  Adding elements in a series is straightforward.  New elements can be added and their effects determined by simply moving along the circle to their respective values.  However, summing elements in parallel is another matter.  This requires considering additional parameters.  Often it is easier to work with parallel elements in the admittance world.

It turns out that the expression for y is the opposite, in sign, of z, and Γ(y) = -Γ(z).  If we know z, we can invert the signs of Γ and find a mirror point situated in the opposite direction.   Thus, an admittance Smith chart can be obtained by rotating the whole impedance Smith chart by 180°.  This is extremely convenient, as it eliminates the necessity of building another chart.  The intersecting point of all the circles (constant conductance and constant susceptances) is at the point (-1, 0) automatically.  With that plot, adding elements in parallel also becomes easier.  Math details can refer to this.

 

Lumped Elements on Smith Chart

When solving problems where elements in series and in parallel are mixed together, we can use the same Smith chart and rotate it around any point where conversions from z to y or y to z exist. 

Let's consider the network of Fig. 5 (the elements are normalized with Z0 = 50Ω).  The series reactance (x) is positive for inductance and negative for capacitance. The susceptance (b) is positive for capacitance and negative for inductance.

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Fig. 5: Input Impedance of Lumped Elements

The circuit needs to be simplified (see Fig. 6).  Starting at the right side, where there is a resistor and an inductor with a value of 1, we plot a series point where the r circle = 1 and the l circle = 1.  This becomes point A.  As the next element is an element in shunt (parallel), we switch to the admittance Smith chart (by rotating the whole plane 180°).  To do this, however, we need to convert the previous point into admittance.  This becomes A'.  We then rotate the plane by 180°.  We are now in the admittance mode.  The shunt element can be added by going along the conductance circle by a distance corresponding to 0.3.  This must be done in a counterclockwise direction (negative value) and gives point B.  Fig. 7 shows the complete impedance transformation using Smith Chart.

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Fig. 6: Break the Network for Analysis

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Fig. 7: Impedance Using Smith Chart

 

In summary

1. Add a serial L:

Move up (clockwise) along  r=constant circle (circles intersects at (1,0))

2. Add a shunt L:

Move up (counter-clock) along g=constant circle (circles intersects at (-1,0))

3. Add a serial C:

Move down (counterclockwise) along r=constant circle (circles intersects at (1,0))

4. Add a shunt C:

Move  down (clockwise) along g=constant circle (circles intersects at (-1,0))

The following figure shows the summary.

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How to do matching using Smith Chart

L-match (8 types)

The following figure shows 4 different type of L match for positive reactance matching

 

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Similarly, there are 4 types for negative reactance just exchange L and C.

pi/T-match

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There are above 8 types of pi/T matching.  Similarly, the mirror from positive to negative is to change L and C.

 

Examples

(I) Impedance Transformation from Tom Lee's RF CMOS book.

* If ZL is a pure resistance and ZL > Zo; only type2 (shunt-C with serial-L, or shunt-L with serial C) can convert Zin < ZL and Zin = ZL / ??  (only at resonant frequency, normally is a LPF or  HPF)

* If ZL is a pure resistance and ZL < Zo; only type 4 (serial-C with shunt-L, or  serial C with shunt C) can convert Zin > ZL and Zin = ?? (only at resonant frequency, normally is a HPF)

The above two L matches are in Tom Lee's book.

(II)

For dipole antenna below resonating frequency, it is like a serial RLC resonator; the resistor is higher than 50Ohm (air is 270Ohm); typical may be  75Ohm.  The resonating  frequency is assumed to be higher than the desired frequency.   (Example, the LC frequency maybe 1GHz, but the operating frequency is 600MHz, etc.) 

Therefore, the impedance is  75+X j Ohm (X is -200 to -50 Ohm).  Is it possible to design a matching network? 

Before/after resonating frequency

Condition 1: Re > 50Ohm and Im < 0 (capacitive load with high real impedance): example: dipole antenna before resonator

Condition 2: Re < 50Ohm and Im > 0 (inductive load and low real impedance): example: loop antenna

Condition 3: Re > 50Ohm and Im > 0 (inductive load with high real impedance??): example: dipole antenna after the resonator?

Condition 4: Re < 50Ohm and Im < 0 (capacitive load with low real impedance??): example: loop antenna

The matching choice (a) serial inductor; (b) parallel inductor.  Both reduce the reactive part.  The problem of (a) is real part is not change.  Therefore choose (b) to reduce R from 72 to 50.  Then use a serial capacitor to bring to the right matching point!!!

The best way to do is to use the center frequency first, not considering the entire frequency range.  E.g. 400M to 800M, maybe use 600M for the matching purpose!!

Examine the L and Pi match

Impedance Matching with Smart Chart

http://www.maxim-ic.com/appnotes.cfm/an_pk/742/

  • Match for maximum power transfer or optimize the noise figure or highest gain?  Highest gain is always lowest noise figure?
  • Maximum power transfer => Rs = RL*
  • ?Ensure quality factor impact or access stability analysis because the matching network can be LPF or HPF or BPF.
  • ? Can we replace RLC with scattering wave analysis using smith chart for both passive and active component (cmos?)  there is no concept of impedance at low frequency? wrong, can I still normalize to 50Ohm since there is still finite value of impedance?

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